首页> 外文会议>International Conference on Electrical Insulating Materials >Doping effect of SiO2/CeO2 on the dielectric, ferroelectric and piezoelectric properties of (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 ceramics
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Doping effect of SiO2/CeO2 on the dielectric, ferroelectric and piezoelectric properties of (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 ceramics

机译:SiO 2 / CeO 2 的掺杂对(Ba 0.7 Ca 0.3 的介电,铁电和压电性能的影响)(Zr 0.2 Ti 0.8 )O 3 陶瓷

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Lead-free (Ba0.7Ca0.3)(Zr0.2Ti0.8)O3 ceramics (BZT-50BCT) with x wt% (x=0,0.05,0.1,0.2,0.4) dopant (SiO2 and CeO2) were prepared by the conventional solid-state reaction from the industry available raw materials. The doping effect of SiO2 and CeO2 with different concentrations on the microstructures and electric properties of BZT-50BCT ceramics was systematically investigated in the present study. Moderate doping level would result in the fine microstructures and the consequent enhanced dielectric, ferroelectric and piezoelectric properties while excessive doping would cause the degradation of the properties. The best piezoelectric performance of d33=476pC/N was achieved by 0.05 wt% CeO2 doping.
机译:制备x重量%(x = 0,0.05,0.1,0.2,0.4)掺杂剂(SiO2和CeO2)的无铅(Ba0.7Ca0.3)(Zr0.2Ti0.8)O3陶瓷(BZT-50BCT)常规的固态反应可从工业上获得原料。本研究系统地研究了不同浓度的SiO2和CeO2掺杂对BZT-50BCT陶瓷的微观结构和电性能的影响。适度的掺杂水平将导致精细的微结构并因此增强介电,铁电和压电性能,而过量的掺杂将导致性能下降。通过掺杂0.05 wt%的CeO2,可以达到d33 = 476pC / N的最佳压电性能。

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