Similarity and difference in temperature dependent recovery of HCS and NBTI

摘要

We investigated the temperature dependence of recovery behavior in p-channel MOSFETs after subjected to hot carrier stress (HCS) and negative bias temperature stress (NBTS) from the recovery activation energy distributions of threshold voltage shifts (ErV) and of interface states (ErD). Both ErV and ErD are composed of the two elements, so-called recoverable- and permanent components (R and P). We found that the temperature dependent recovery after HCS and NBTS can be interpreted by R and P. In addition, the degradation mechanism, i.e., origins of R and P, was discussed. This study sheds light on the high temperature degradation mechanism.