Bias dependence of muon-induced single event upsets in 28 nm static random access memories

摘要

Experiments performed at TRIUMF and the Rutherford Appleton ISIS facility demonstrate the bias dependence of muon-induced single event upsets in delidded 28 nm static random access memories. Increased probability for upset is observed for memories operating at reduced voltages. Fully packaged parts are shown to be suitable to screen for low-energy muon sensitivity.