首页> 外文会议>IEEE International Symposium on Circuits and Systems >A 6th order, 700#x2013;1100 MHz, 3.6 Gb/s RF bandpass #x03A3;#x0394; ADC with two-tone SFDR 67.2 dB in 65nm CMOS
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A 6th order, 700#x2013;1100 MHz, 3.6 Gb/s RF bandpass #x03A3;#x0394; ADC with two-tone SFDR 67.2 dB in 65nm CMOS

机译:6 阶,700-1100 MHz,3.6 Gb / s RF带通ΣΔADC,在65nm CMOS中具有两音SFDR 67.2 dB

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This paper presents a 6th order, 700–1100 MHz, 3.6-Gb/s sampling continuous-time band-pass sigma-delta (CT BP ΣΔ) ADC realized in 65 nm CMOS technology. A high linearity transconductance-stage with Miller effect cancellation is proposed to provide above 30 dBm IIP3 over PVT corners. A 4-bit quantizer and non-return to zero (NRZ) feedback DACs are engaged in this design. The post-layout simulation shows a maximum 67.2 dB two-tone SFDR in 1-MHz bandwidth, IIP3 and noise figure are 4.3 dBm and 17.3 dB, respectively.
机译:本文介绍了采用65 nm CMOS技术实现的6阶700–1100 MHz,3.6 Gb / s采样连续时间带通sigma-delta(CT BPΣΔ)ADC。提出了一种具有米勒效应抵消的高线性跨导级,以在PVT拐角处提供30 dBm以上的IIP3。该设计采用了4位量化器和不归零(NRZ)反馈DAC。布局后仿真显示,在1-MHz带宽内最大67.2 dB的双音SFDR,IIP3和噪声系数分别为4.3 dBm和17.3 dB。

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