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首页> 外文期刊>IEEE Journal of Solid-State Circuits >A 63 dB SNR, 75-mW Bandpass RF Σ∆ ADC at 950 MHz Using 3.8-GHz Clock in 0.25-μm SiGe BiCMOS Technology
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A 63 dB SNR, 75-mW Bandpass RF Σ∆ ADC at 950 MHz Using 3.8-GHz Clock in 0.25-μm SiGe BiCMOS Technology

机译:在0.25μmSiGe BiCMOS技术中使用3.8GHz时钟在950MHz时提供63dB SNR,75mW带通RF Σ∆ ADC

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A fourth-order continuous-time LC bandpass sigma-delta ADC is designed using a new architecture with only non-return-to-zero feedback DACs to mitigate problems associated with clock jitter, along with individual control of coefficients in the noise transfer function. The ADC performs direct digitization of RF signals around 950-MHz center frequency with a 3.8-GHz clock. The operation of the proposed ADC architecture is examined in detail and extra design parameters are introduced to enhance the operating range and improve the stability of the ADC. Measurement results of the ADC, implemented in IBM 0.25-mum SiGe BiCMOS technology, show SNR of 63 dB and 59 dB in signal bandwidths of 200 kHz and 1 MHz, respectively, around 950 MHz, while consuming 75 mW of power from plusmn1.25-V supply
机译:采用新架构设计的四阶连续时间LC带通sigma-delta ADC仅具有不归零反馈DAC,以缓解与时钟抖动相关的问题,并单独控制噪声传递函数中的系数。 ADC使用3.8 GHz时钟对950 MHz中心频率附近的RF信号进行直接数字化。详细研究了所提议的ADC架构的操作,并引入了额外的设计参数以扩大工作范围并提高ADC的稳定性。采用IBM 0.25微米SiGe BiCMOS技术实现的ADC的测量结果显示,在950 MHz左右的200 kHz和1 MHz的信号带宽中,SNR分别为63 dB和59 dB,而plusmn1.25消耗的功率为75 mW -V电源

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