Out-of-plane and inline RF switches based on Ge2Sb2Te5 phase-change material

摘要

We present the fabrication and characterization of novel RF switches based on Ge2Sb2Te5 (GST) phase change material. Such ohmic devices show non-volatile switching with resistivity changes up to 105 as the material is transforming between the amorphous and the crystalline state by either applying a voltage pulse or direct heating. We investigated the RF properties and power handling of such devices in two configurations: out-of-plane (GST material between two electrodes) and inline switches. For a directly heated 10-µm length inline switch we measured an on-state resistance of 7 Ω, and an off-state capacitance and resistance of 13.7 fF and 6.47 MΩ, respectively, resulting in a cut-off frequency of ∼1.6 THz.