首页> 外文会议>IEEE MTT-S International Microwave Symposium >Broadband transition from dielectric-filled to air-filled Substrate Integrated Waveguide for low loss and high power handling millimeter-wave Substrate Integrated Circuits
【24h】

Broadband transition from dielectric-filled to air-filled Substrate Integrated Waveguide for low loss and high power handling millimeter-wave Substrate Integrated Circuits

机译:宽带从介电填充到空气填充的衬底集成波导的宽带过渡,可实现低损耗和高功率处理毫米波衬底集成电路

获取原文

摘要

Air-filled Substrate Integrated Waveguide (SIW) based on multilayer Printed Circuit Board (PCB) process is proposed in this paper for millimeter-wave applications that require low cost, high performances and compactness. This air-filled SIW allows for substantial loss reduction and power handling enhancement. Its fabrication involves three layers. The top and bottom substrates can consist of a low cost standard substrate such as FR-4 on which base-band or digital circuits can be implemented so to obtain a very compact, high performance and low cost millimeter-wave system. At Ka-band, it is shown that air-filled SIW compared to dielectric-filled SIW based on Rogers RT/Duroid 5880 and 6002 reduces losses by a mean value of 0.054 dB/cm and 0.11 dB/cm and increases average power handling capability by 6 dB and 8 dB, respectively. To allow interconnects of the proposed air-filled SIW with dielectric-filled SIW, a broadband transition is presented. The design steps of this transition are detailed. For demonstration purposes, a back-to-back transition operating over the Ka-band is fabricated. It achieves a matching of better than −15 dB and an insertion loss of 0.6 ±0.2 dB (0.3 ±0.1 dB for the transition) from 27 to 40 GHz.
机译:本文针对需要低成本,高性能和紧凑性的毫米波应用,提出了基于多层印刷电路板(PCB)工艺的充气基板集成波导(SIW)。这种充满空气的SIW可以大大降低损耗并提高功率处理能力。它的制造涉及三层。顶部和底部基板可以由低成本标准基板(例如FR-4)组成,可以在其上实现基带或数字电路,从而获得非常紧凑,高性能和低成本的毫米波系统。在Ka频段,与基于Rogers RT / Duroid 5880和6002的电介质填充SIW相比,空气填充的SIW降低了0.054 dB / cm和0.11 dB / cm的平均值,并提高了平均功率处理能力分别降低6 dB和8 dB。为了使建议的充气式SIW与介电式SIW相互连接,提出了宽带过渡方案。详细介绍了此过渡的设计步骤。出于演示目的,制作了在Ka波段上运行的背对背过渡。从27 GHz到40 GHz,它的匹配度优于-15 dB,插入损耗为0.6±0.2 dB(过渡为0.3±0.1 dB)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号