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Low-loss and broadband coaxial line to air-filled substrate integrated waveguide transition

机译:低损耗和宽带同轴线到充气基板的集成波导过渡

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摘要

This Letter introduces a low-loss and broadband coaxial line to air-filled substrate integrated waveguide (AFSIW) transition for the first time. The fabrication of this transition involves three substrate layers. The inner conductor of the coaxial line is connected to the metal layer of the lower substrate and its outer conductor is connected to the metal layer of the upper substrate. This transition uses a taper-shaped configuration at the end of the line to achieve the better impedance matching and wider matching bandwidth. In the previously reported AFSIW components, several transitions are used to transform the transverse electromagnetic mode of the coaxial line to the TE 10 mode of the AFSIW structure. By using the proposed transition, these extra transitions are eliminated, which leads to the size and loss reduction of the structure. For validation purposes, a prototype of the back-to-back coaxial line to AFSIW transition is fabricated and measured for the entire C-band. The simulated and measured results are in good agreement. The proposed transition achieves the measured insertion loss of 0.55 +/- 0.5 dB (0.28 +/- 0.25 dB for the transition) and return loss of better than -11 dB from 4 to 8 GHz.
机译:这封信首次将低损耗和宽带同轴线引入到充气基板集成波导(AFSIW)过渡中。该过渡的制造涉及三个衬底​​层。同轴线的内部导体连接到下基板的金属层,并且其外部导体连接到上基板的金属层。该过渡在线路末端使用了锥形结构,以实现更好的阻抗匹配和更宽的匹配带宽。在先前报告的AFSIW组件中,使用了几个过渡将同轴线的横向电磁模式转换为AFSIW结构的TE 10模式。通过使用建议的过渡,消除了这些额外的过渡,从而导致了结构的尺寸减小和损耗减小。为了进行验证,制造并测量了整个C波段的背对背同轴线到AFSIW的原型。仿真和测量结果吻合良好。拟议的过渡实现了测得的插入损耗为0.55 +/- 0.5 dB(过渡时为0.28 +/- 0.25 dB),并且在4至8 GHz范围内的回波损耗优于-11 dB。

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  • 来源
    《Electronics Letters》 |2019年第14期|801-803|共3页
  • 作者单位

    Shahid Bahonar Univ Kerman Dept Elect Engn Microwave & Millimeter Wave Res Grp Kerman Iran;

    KN Toosi Univ Technol Sch Elect Engn Ctr Res & Technol Tehran Iran;

    Univ Alberta Intelligent Wireless Technol Lab Edmonton AB T6G 2R3 Canada;

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  • 正文语种 eng
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