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5.7 A graphics execution core in 22nm CMOS featuring adaptive clocking, selective boosting and state-retentive sleep

机译:5.7采用22nm CMOS的图形执行内核,具有自适应时钟,选择性升压和状态保持性睡眠

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The demand for high-performance graphics capability even in extremely power-constrained platforms such as smartphones and tablets requires circuit techniques that scale from efficient operation at low voltage to high performance when needed. It is well known that energy efficiency improves as supply voltage is scaled down, reaching a maximum near the device threshold voltage where switching energy savings from voltage reduction is balanced by increased leakage energy from frequency loss. Achieving this voltage reduction, however, requires techniques that address intrinsic VMIN limitations in arrays (SRAM, register file arrays, ROMs), voltage droop guardband reduction in logic, as well as techniques for reducing leakage energy, which can dominate at low voltage. It is important that these techniques, while providing energy-efficient operation at low voltage, do not impact the high-performance mode, which is also critical for graphics workloads.
机译:甚至在智能手机和平板电脑等功耗极受限制的平台中,对高性能图形功能的需求也要求电路技术能够从低电压下的有效操作扩展到需要时的高性能。众所周知,随着电源电压的降低,能量效率会提高,达到器件阈值电压附近的最大值,在该阈值电压下,由于电压损耗引起的开关能量节省与频率损耗引起的泄漏能量增加相平衡。但是,要实现这种电压降低,就需要解决阵列(SRAM,寄存器文件阵列,ROM)中固有的VMIN限制的技术,逻辑上降低电压下降保护带的技术以及降低在低电压下占主导地位的泄漏能量的技术。这些技术在提供低电压节能操作的同时,不要影响高性能模式,这对于图形工作负载也至关重要,这一点很重要。

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