Minimization of Low Side IGBTs Turn on Switching Loss by Simple External circuitry

摘要

This paper presents how to minimize low side IGBT turn on energy loss while keeping open emitter configuration and shunt resistor usage. It will be explained that how to minimize low side gate voltage drop effectively by using simple and low cost external circuitry. And also, it will be presented that how to apply this concept to IGBT module and IPM. Finally, simulation and real experiment results which shows improved performance compare with conventional products by applying suggested low side switching loss reduction circuitry will be presented.