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Low-loss IGBTs Improve Switching In Sub-2.5 kW Inverter Applications

机译:低损耗IGBT可改善2.5 kW以下逆变器应用中的开关

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摘要

Traditionally, IGBTs have addressed applications requiring high-voltage and -current ratings and relatively slow switching frequencies. When the switching frequency is low, the inherently low conduction losses resulting from the device's low V_(CE(on)) (collector-to-emitter saturation voltage), which derive from the IGBT's minority carrier operation, outweigh the poor switching performance, enabling high overall operating efficiency. This article will discuss a new depletion-stop trench IGBT technology that combines low switching losses with the traditional IGBT advantage of low conduction loss for sub-2.5 kW inverter applications.
机译:传统上,IGBT解决了需要高额定电压和额定电流以及相对较慢的开关频率的应用。当开关频率较低时,由于IGBT的少数载流子工作而导致的器件低V_(CE(on))(集电极-发射极之间的饱和电压)所导致的固有的低导通损耗会超过不良的开关性能,从而实现总体运行效率高。本文将讨论一种新的耗尽停止沟槽IGBT技术,该技术将低开关损耗与传统IGBT的优势相结合,适用于2.5 kW以下的逆变器应用。

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