Effective aluminum oxide thin films deposition using reactive pulsed magnetron sputtering--possibilities and limitations

摘要

Thin film chemical compounds can be obtained as a result of sputtering of dielectric target (High-Frequency sputtering) or sputtering of conductive target in reactive atmosphere (Direct Current or pulsed sputtering). Achievement of high efficiency of thin films deposition is possible when conductive target is sputtered, as its surface is not covered (or is covered only partially) with dielectric compound. Aim of this work was obtaining aluminum oxide thin films with highest efficiency, using reactive pulsed magnetron sputtering of aluminum target in Ar+O_2 atmosphere.