Monte Carlo Study of the Influence of Electron Beam Focusing to SEM Linewidth Measurement

摘要

Based on a Monte Carlo simulation method we have analyzed the influence of electron beam focusing to linewidth measurement for Si trapezoid lines by scanning electron microscopy (SEM) image. The electron probe focusing with finite probe width due to aberration is considered by two different models for simulating incident electron trajectories. The simulation result shows that on the specimen surface the electron beam profile is deviated from the Gaussian probe shape because of the surface topography; the measured linewidth then depends on the focus position and aperture angle.