Copper germanium alloys formation by the low temperature atomic hydrogen treatment

摘要

The influence of atomic hydrogen treatment on two-layer thin-film Cu/Ge system deposited on i-GaAs substrate was investigated. It was established that the treatment in an atomic hydrogen flow with density 10~(15) at./(cm~2·s) at a room temperature for 5 min results the solid state interdiffusion of Cu and Ge thin films and polycrystalline CuGe alloy formation with the vertically oriented grains.