Formation manner null of hydrogenation amorphous silicon germanium alloy

摘要

PURPOSE:To acquire a low defective hydrogenated amorphous silicon-germanium alloy film which is important for improvement of efficiency of solar battery, optical sensor, etc. CONSTITUTION:A magnetic field is formed inside a vacuum chamber, hydrogen 1 to 20 times introduced raw gas amount is introduced, high frequency of 10W or more is introduced to 1cc/min of raw gas flow rate under pressure conditions of 30mTorr or less to form a film by plasma discharge, urbach energy and defective density of an acquired film are evaluated based on low energy optical spectrum by a fixed photoelectric current method to show that realization is possible by a method for carrying out optimization of film formation conditions. As shown in the figure, a film is realizd whose peak defective density is close to that of a hydrogen amorphous silicon film at urback energy of 10meV or less. Thereby, possibility of improvement of efficiency of solar battery, optical sensor, etc., is largely increased.