JOSEPHSON TUNNEL JUNCTION DEVICE HAVING TUNNEL BARRIER OF AMORPHOUS SILICON COMBINED WITH HYDROGEN* GERMANIUM OR SILICON GERMANIUM ALLOY

摘要

A Josephson tunnel junction device having niobium superconductive electrodes with an amorphous hydrogenated semiconductor tunnelling barrier therebetween comprised of silicon or germanium or an alloy thereof supports an unusually high critical current density. Barrier dopants provide a further increase in the critical current density. The barrier is deposited by rf-sputtering in an atmosphere containing hydrogen.