This study investigated the effects of substrate orientation on the phenomena of surface blistering and exfoliation in hydrogen implanted germanium. Ge(100) and Ge(111) wafers were employed and implanted with 200 keV H_2~+ ions to a fluence of 2.5×10~(16) ions/cm . Following ion implantation, the specimens were annealed using furnace annealing methods. Characteristic analyses were conducted using optical microscopy (OM), secondary ion mass spectroscopy (SIMS), and cross-sectional transmission electron microscopy (XTEM). The results show that Ge(100) has a lower activation energy level for blister and crater formation than Ge(111) does. The average diameter of blisters and craters in Ge(100) is larger than that in Ge(111). Ge(100) also has a lower areal number density of blisters, but a higher one of craters. Furthermore, the micro-cracks in Ge(100) corresponds to a thicker exfoliated thickness as well as a more evident extension and growth than those in Ge(111).
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