Electromigration and Its Impact on Physical Design in Future Technologies

摘要

Electromigration (EM) is one of the key concerns going forward for interconnect reliability in integrated circuit (IC) design. Although analog designers have been aware of the EM problem for some time, digital circuits are also being affected now. This talk addresses basic design issues and their effects on electromigration during interconnect physical design. The intention is to increase current density limits in the interconnect by adopting electromigration-inhibiting measures, such as short-length and reservoir effects. Exploitation of these effects at the layout stage can provide partial relief of EM concerns in IC design flows in future.