Influence of Growth Temperature on the Properties of Al-doped ZnO Thin Film Fabricated by Pulsed Laser Deposition

摘要

Al-doped ZnO thin film (AZO) is regarded as a potential candidate to replace the expensive ITO thin film and is the central issue in current research in the field of transparent conductive film because of its properties of high conductivity, low level of pollution, high transmittanceand and low fabrication cost. In this paper, c-axis preferred growth AZO films were fabricated on sapphire (0001) substrate by the pulsed laser deposition at different substrate temperatures (Ts). The scanning electron microscope (SEM), X-ray diffraction (XRD) and the four-point probe (FPP) were used to measure the thin film microstructure and electrical characteristics. SEM results show that the surfaces of all AZO films are very flat and have no droplets on them, expect the film grown at room temperature. The grain sizes of AZO gradually decrease with increse of T_s. X-ray diffraction spectra show that the quality of the crystallization of thin films gradually is improved with increase of T_s. The results measured by FPP show that with increase of temperature, sheet resistance first decreases then increases.