Rapid thermal annealing on dS/Cu(In, Ga)Se2-based solar cells

摘要

In order to improve the performance of CIGS solar cell, Rapid thermal annealing (RTA)was performed on Cu(In, Ga)Se2 (CIGS) solar cells under various annealing temperature (110°C, 150 °C, 180°C, 2 min holding time) in air ambient. Hall-effect, SEM and J-V measurements were carried out on CIGS films and cells before and after RTA treatments. The results show that the RTA treatment (annealing temperature∼150°C, holding time∼2 min), as the optimal annealing condition, can greatly improve not only the quality of absorber film, but also the cell performance (including fill factor, open-circuit voltage). An high-efficiency of cell was achieved from 13.2% to 15.3% after the optimal RTA treatment.