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Influence of anisotropic diffusion of Ga and Al atoms during AlGaAs growth for periodically-inverted AlGaAs waveguides

机译：Ga和Al原子在藻类生长期间各向异性扩散对周期性倒立的藻类波导的影响

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We have investigated a quasi-phase-matching AlGaAs waveguide using cathodoluminescence spectroscopy and atomic force microscopy. We found that the anisotropic diffusion of Al/Ga atoms causes Al-composition modulation as well as interface corrugations.

机译：我们研究了使用阴极发光光谱和原子力显微镜的准相匹配的藻类波导。我们发现Al / Ga原子的各向异性扩散导致Al组合调制以及界面波纹。

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《Conference on Lasers and Electro-Optics》|2012年||共2页
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Tomonori Matsushita; Shigeki Yoshida; Junya Ota; Takashi Kondo;
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中图分类 TN24-53;
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Harmonic generation and mixing; Semiconductor materials; Wave-length conversion devices; Guided waves;

机译：谐波产生和混合;半导体材料;波长转换装置;引导波;
入库时间 2022-08-21 02:29:40

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专利

1. Anisotropic two-photon transitions in GaAs/AlGaAs multiple quantum well waveguides [J] . Yang C.C., Villeneuve A. IEEE Journal of Quantum Electronics . 1993,第12期

机译：GaAs / AlGaAs多量子阱波导中的各向异性双光子跃迁
2. Planar GaAs-AlGaAs MQW transverse junction ridge waveguide lasers using shallow zinc diffusion [J] . Wei Yang, Gopinath A. IEEE Photonics Technology Letters . 1995,第8期

机译：使用浅锌扩散的平面GaAs-AlGaAs MQW横向结脊波导激光器
3. High extinction ratio GaAs/AlGaAs electroabsorption modulators integrated with passive waveguides using impurity-free vacancy diffusion [J] . Cusumano P., Krauss T. Electronics Letters . 1995,第4期

机译：高消光比GaAs / AlGaAs电吸收调制器与无源波导集成，采用无杂质空位扩散
4. Influence of anisotropic diffusion of Ga and Al atoms during AlGaAs growth for periodically-inverted AlGaAs waveguides [C] . Matsushita, Tomonori CLEO;Conference on Lasers and Electro-Optics . 2012

机译：Ga和Al原子在AlGaAs生长过程中各向异性扩散对周期性倒相AlGaAs波导的影响
5. Vertical Integration of Optical Waveguides in the AlGaAs/GaAs Semiconductors [D] . Liao, Zhongfa. 2018

机译：AlGaAs / GaAs半导体中光波导的垂直集成
6. Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well [O] . Huiqi Ye, Changcheng Hu, Gang Wang, 2011

机译：非对称（001）GaAs / AlGaAs量子阱中的各向异性面内自旋分裂
7. Design and characterization of a 67 GHz 0.3 um AlGaAs/GaAs/AlGaAs HEMT monolithic amplifier in coplanar waveguide technology [O] . Bessemoulin A., Algani C., Alquié G., 1998

机译：共面波导技术中的67 GHz 0.3 um AlGaAs / GaAs / AlGaAs HEMT单片放大器的设计和表征
8. Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by MeV Ion Beam Bombardment [R] . Ila, D. , Williams, E. K. , Zimmerman, R. L. , 2000

机译：用meV离子束轰击制备Gaas / alGaas系统中的光通道波导

Influence of anisotropic diffusion of Ga and Al atoms during AlGaAs growth for periodically-inverted AlGaAs waveguides

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