Acoustic loss mechanism in silicon dioxide films for temperature compensated surface acoustic wave devices

摘要

This paper investigates origin of the excess acoustic propagation loss caused in silicon dioxide (SiO₂) with deposition temperature T. It is shown that SiO₂ prepared lower T gives higher surface acoustic wave (SAW) attenuation and larger optical attenuation in the UV region. The Raman spectroscopy shows the increase of the peak in the small wave number region. These results show that the acoustic propagation loss is caused by the distortion of Si-O network structure and the optical characterization is quite useful for the analysis of the attenuation mechanism as well as the TCE behavior in SiO₂-based films.