An improved buried layer rectifier structure with P-type islands

摘要

A new BLR structure with P type islands (PI-BLR) is proposed, the principle of which is to introduce P type islands into the JFET region of the basic BLR structure. The forward voltage drop (VF) of BLR can be further reduced without affecting the breakdown voltage of BLR. Thus, an attractive method is provided to coordinate the trade-off relationship between forward voltage drop and breakdown voltage. The simulations by MEDICI show that the improved structure exhibits an ultra-low VF which decreases by 7% compared with the basic BLR at current density of 2∗10−6A/μm2.