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Integrated Class C-VCO — Mixer for 2.45 GHz transmitter in 180nm CMOS technology

机译:180nm CMOS技术的2.45 GHz变送器集成C-VCO - 混频器

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This paper presents on the Up-conversion mixer and Class-C CMOS LC VCO which operates at 2.45 GHz designed using 180 nm CMOS RF Technology. Voltage Controlled Oscillator, VCO combined with mixer design and achieves phase noise of -119 dBc/Hz and -131 dBc/Hz at 1 MHz and 3 MHz offset respectively. The system consumes 2.04 mW from 1.2 V supply. The measured Figure of Merit (FoM) reaches 182.08 dBc/Hz at 1 MHz offset. The passive mixer recorded third-order input intercept point (IIP3) of 13.28 dBm and 1-dB compression point (P1dB) of 5.17 dBm. This mixer design generates a stable matching at -23.91 dB and achieves a good port to port isolation of -61 dB.
机译:本文介绍了上转换混合器和CMOS LC VCO,其在使用180nm CMOS RF技术设计的2.45 GHz上运行。压控振荡器,VCO与混频器设计相结合,并分别实现1 MHz和3 MHz偏移的-119dBc / Hz和-131dBc / Hz的相位噪声。系统从1.2 V电源消耗2.04 mW。测量的优点(FOM)达到182.08dBc / Hz,在1 MHz偏移量。被动混频器记录了13.28dBm的三阶输入截取点(IIP3),1-DB压缩点(P1DB)为5.17 dBm。该混频器设计在-23.91 dB处产生稳定的匹配,并达到良好的端口到端口隔离为-61 dB。

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