85W Pavg, 500W Peak Power, 1.8-2.2GHz Wideband GaN Doherty Power Amplifier

摘要

This paper presents a wideband Doherty Power Amplifier (DPA) suitable for Band-1 and Band-3 LTE Basestation applications, using Qorvo's 0.25μm GaN on SiC High-Voltage technology. This DPA puts out 85W Pavg and 500W peak power at the Doherty 50-Ω output, with relatively flat 45-49% average efficiency across 20% frequency bandwidth, when tested using 10dB PAR WCDMA signal. The DPA offers very good linearized DPD performance in band-1 for 1×20MHz and 3z20MHz LTE signals. To the knowledge of the authors, this is a first 2-Way DPA demonstration exhibiting such wideband high power levels, over 20% bandwidth, while maintaining good efficiency and relatively good linearized performance, with less complexity.