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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages
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3–3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages

机译:利用输出补偿级的3–3.6 GHz宽带GaN Doherty功率放大器

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摘要

We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3–3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3–3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.
机译:我们讨论了在3–3.6 GHz频率范围内用于宽带操作的基于GaN的混合Doherty功率放大器的设计,实现和实验特性。该设计采用一种基于宽带补偿器网络的新颖,简单的方法。在频带的上限对主放大器采用了二次谐波调谐,从而改善了放大器带宽上的增益均衡。已实现的放大器基于封装的GaN HEMT,在退回6 dB的输出功率时,在3–3.6 GHz频段内的漏极效率高于38%,增益约为10 dB,最大功率在43至60 GHz之间。 44 dBm,饱和效率在55%至66%之间。关于现有技术,我们通过一种更简单的方法,以较高的频率获得了在带宽,输出功率和效率方面具有相似性能的宽带放大器。此外,所测得的恒定恒定最大输出功率为20 W,这表明10 W(A类)GaN HEMT的功率利用率在整个放大器频带上都非常出色。

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