GaN based Junctionless Double Surrounding Gate (JLDSG) MOSFET for high power, high voltage and high frequency applications

摘要

In this paper GaN based JLDSG MOSFET has been analyzed for the time for different channel lengths (L = 18 nm, 24 nm, 30 nm) for its high power (HP), high voltage (HV) and high frequency operation. The performance of JLDSG MOSFET has been compared with conventional Junctionless Surrounding Gate (JLSG) MOSFET. It is found that JLDSG MOSFET poses high drain current, transconductance, Subthreshold Slope, Transconductance Generation Factor (TGF), cut off frequency (fT), Maximum Transducer Power Gain (MTPG) and Unilateral Power Gain (UPG).