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Highly miniaturized on-chip RF components employing PPGM with single-sided via holes for application to GaAs MMIC

机译:高度小型化的片上RF组件,采用PPGM,具有单侧通孔,用于应用于GaAs MMIC

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In this work, using a microstrip line employing periodically perforated ground metal (PPGM) with single-sided via holes on GaAs MMIC, highly miniaturized and broadband on-chip passive components were developed for application to GaAs MMIC. The passive components employing PPGM were highly miniaturized compared with conventional ones.
机译:在这项工作中,使用采用周边穿孔的微带线,具有在GaAs MMIC,高度小型化和宽带片上无源元件上的单侧通孔,用于应用于GaAs MMIC。与常规的相比,使用PPGM的被动组分高度小型化。

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