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60-GHz dual-conversion down-converter using Schottky diode and dual-band rat-race coupler in standard 0.18-#x03BC;m CMOS process

机译:采用肖特基二极管和双频带鼠形耦合器的60 GHz双转换下变频器,采用标准的0.18μmCMOS工艺

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A 60 GHz dual-conversion down-converter with a microwave mixer in the first conversion and analog mixers in the second conversion is demonstrated in 0.18-μm CMOS technology. The first down-converted sub-harmonic mixer consists of a rat-race coupler with the dual-band Chebyshev response and Schottky diodes in anti-parallel configuration. The high cut-off frequency of a Schottky diode helps lowering the conversion loss and noise figure of a microwave mixer. A double balanced resistive mixer is used at the second down-converted mixer. As a result, the conversion gain is about 6 dB in the frequency range of 45∼67 GHz and the IF bandwidth is over 1 GHz. IP1dB is about −5-dBm and IIP3 is about 5-dBm at 45∼67 GHz. The single sideband noise figure is 21 dB at 60 GHz. The total power consumption is 71 mW at 2.5 V.
机译:在0.18-μmCMOS技术中演示了一种60 GHz双转换下变频器,该转换器在第一转换中具有微波混频器,在第二转换中具有模拟混频器。第一个下变频的次谐波混频器由具有双频Chebyshev响应的大鼠种族耦合器和反并联配置的肖特基二极管组成。肖特基二极管的高截止频率有助于降低微波混合器的转换损耗和噪声系数。在第二降频混频器中使用了双平衡电阻混频器。结果,在45-67 GHz的频率范围内转换增益约为6 dB,IF带宽超过1 GHz。在45至67 GHz的频率下,IP1dB约为-5 dBm,IIP3约为5 dBm。在60 GHz时,单边带噪声系数为21 dB。在2.5 V时总功耗为71 mW。

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