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Design methodology of tunable impedance matching circuit with SOI CMOS tunable capacitor array for RF FEM

机译:用于RF FEM的具有SOI CMOS可调电容器阵列的可调阻抗匹配电路的设计方法。

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For the tunable RF FEMs or Antennas, analysis on optimal design of tunable capacitors which consist of MIM capacitors and RF CMOS switches is performed in terms of quality factor, tuning ratio and harmonics. To handle up to +36dBm RF signal, the Stacked-FET and series Capacitor-Transistor-Capacitor (CTC) configuration applied Coupled-Bias(CB) are proposed, which in addition to being high-linearity can eliminate a negative voltage generator. Using the designed tunable capacitors, optimal tunable matching circuit is proposed.
机译:对于可调谐RF FEM或天线,根据品质因数,调谐比和谐波,对由MIM电容器和RF CMOS开关组成的可调谐电容器的最佳设计进行了分析。为了处理高达+ 36dBm的RF信号,提出了应用耦合偏置(CB)的堆叠式FET和串联电容-晶体管-电容器(CTC)配置,除了具有高线性度之外,还可以消除负电压发生器。利用设计的可调电容器,提出了最佳的可调匹配电路。

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