A concurrent dual-band low-noise amplifier for K- and Ka-band applications in SiGe BiCMOS technology

摘要

A 24/35-GHz BiCMOS concurrent dual-band low-noise amplifier (DBLNA) has been developed. The proposed concurrent DBLNA was designed using new active notch filters embedded into a wideband LNA. The concurrent DBLNA has measured peak gains of 21.9/16.6 dB at 23.5/35.7 GHz, respectively. The measured 3-dB bandwidths of the low and high pass-bands are 7.7 GHz (18.8–26.5 GHz) and 8.8 GHz (32.8–41.6 GHz), respectively. The best noise figures measured in the passbands are 5.1/7.2 dB at 22/35.6 GHz, respectively. The measured IIP3 performances are −10.4/−8.3 dBm at 24/35 GHz, respectively.