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A 21-41 GHz Compact Wideband Low-Noise Amplifier Based on Transformer-Feedback Technique in 65-nm CMOS

机译:基于65-NM CMOS的变压器反馈技术的21-41 GHz紧凑型宽带低噪声放大器

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A compact wideband low-noise amplifier (LNA) with utilizing the transformer-feedback technique for 5G multi-band millimeter-wave application is proposed. The proposed LNA composes of cascaded common source stage and cascode stage based on the shunt-series input transformer, positive drain-source inter-stage transformer and negative drain-source feedback output transformer to realize wider input matching bandwidth, higher gain and stability respectively. The LNA shows that the 3-dB bandwidth is from 21 to 41 GHz, which covers the whole Ka band, the maximum power gain is 14.2 dB, and the NF from 3.0 to 4.6 dB. The dc power consumption is 17.5 mW with 1-V supply voltage. Taking advantage of the exceeding compactness from more the transformer-based techniques, the LNA occupies compact chip area of 0.18 mm2 with pads using 65-nm CMOS process.
机译:提出了一种利用5G多带毫米波应用的变压器反馈技术的紧凑型宽带低噪声放大器(LNA)。所提出的LNA基于分流串联输入变压器,正漏电源间互换器和负漏源反馈输出变压器组成级联的公共源级和基本码级,分别实现更广泛的输入匹配带宽,更高的增益和稳定性。 LNA表明,3-DB带宽为21至41GHz,其覆盖整个KA带,最大功率增益为14.2 dB,NF为3.0至4.6 dB。直流功耗为17.5兆瓦,电压为1-V电源。利用较大的基于变压器的技术的超细度,LNA占据紧凑型芯片面积为0.18毫米 2 使用焊盘使用65nm cmos工艺。

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