首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS
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An Ultra-Low-Power Transformer-Feedback 60 GHz Low-Noise Amplifier in 90 nm CMOS

机译:采用90 nm CMOS的超低功耗变压器反馈60 GHz低噪声放大器

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An ultra-low-power 60 GHz low-noise amplifier (LNA) with a 12.5 dB peak gain and a 5.4 dB minimum NF is demonstrated in a 90 nm CMOS technology. The LNA is composed of four cascaded common-source stages with the gate-source transformer feedback applied to the input stage for simultaneous noise and input matching. Also, the drain-source transformer feedback is used in the following stages for gain enhancement and interstage/output matching. This LNA consumes only 4.4 mW from a 1 V supply with a compact core area of 0.047 .
机译:在90 nm CMOS技术中展示了具有12.5 dB峰值增益和5.4 dB最小NF的超低功耗60 GHz低噪声放大器(LNA)。 LNA由四个级联的共源级组成,栅源变压器反馈被施加到输入级,以同时实现噪声和输入匹配。此外,漏极-源极变压器反馈在以下阶段中用于增益增强和级间/输出匹配。该LNA的1 V电源仅消耗4.4 mW的功率,紧凑的内核面积为0.047。

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