Silicon-on-Insulator based Micromachining Technology for Sub-Terahertz Waveguide Devices

摘要

The microfabrication technology based on Silicon-on-Insulator (SOI) for waveguide devices at subterahertz frequencies is investigated in this work. The relationship between the critical micromachining parameters and the performance of waveguide devices is discussed for achieving a better understanding of the SOI-based waveguide micromachining processes. Some typical sub-THz waveguide structures are demonstrated to verify the analysis to the proposed micromachining processes accordingly. SOI-based micromachining technology is one of the most promising methods to realize sub-THz components and their integration.