Selection method of power semiconductor devices for serial group circuits of power converters

机译：功率转换器串行组电路功率半导体器件的选择方法

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The article discusses the method of selection of power semiconductor devices for formation of group serial circuits of power electronics devices. It is proposed to carry out the selection on a set of parameters, using the developed hardware and software complex. The results of calculating values of capacitance capacitor of snubber circuit are present for group connection.

机译：本文讨论了用于形成电力电子设备组串行电路的功率半导体器件的选择方法。建议使用开发的硬件和软件复合体进行一组参数进行选择。基团连接存在计算缓冲电路电容电容值的结果。

著录项

来源
《International Siberian Conference on Control and Communications》|2017年|808p|共4页
会议地点
作者
N. N. Bespalov; S. S. Kapitonov; M. V. Ilyin; A. E. Lysenkov;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN91-53;
关键词
Snubbers; Semiconductor diodes; Capacitance; Capacitors; Power semiconductor devices; Conductivity; Temperature dependence;

机译：缓冲器;半导体二极管;电容;电容;功率半导体器件;电导率;温度依赖;

相似文献

外文文献
中文文献
专利

1. Investigation of multiple short-circuits characteristics and reliability in SiC power devices used for a start-up method of power converters [J] . Mannen Tomoyuki, Isobe Takanori, Wada Keiji Microelectronics & Reliability . 2020,第Nova期

机译：用于电力转换器启动方法的SIC电源装置的多个短路特性和可靠性研究
2. Converter Circuit Design, Semiconductor Device Selection and Analysis of Parasitics for Micropower Electrostatic Generators [J] . Bernard H. Stark, Paul D. Mitcheson, Peng Miao, IEEE Transactions on Power Electronics . 2006,第1期

机译：微功率静电发生器的转换器电路设计，半导体器件选择和寄生分析
3. Power devices are in the chips: New power integrated circuits, called PICs, put both power-handling semiconductors and logic on the same IC chip; soon they may be part of every household appliance [J] . Rumennik V. IEEE Spectrum . 1985,第7期

机译：功率器件位于芯片中：称为PIC的新型功率集成电路将功率处理半导体和逻辑都放在同一IC芯片上；很快它们可能会成为所有家用电器的一部分
4. Selection method of power semiconductor devices for serial group circuits of power converters [C] . N. N. Bespalov, S. S. Kapitonov, M. V. Ilyin, International Siberian Conference on Control and Communications . 2017

机译：用于功率转换器的串联组电路的功率半导体器件的选择方法
5. On the stability of circuits switched by wide band-gap power semiconductor devices. [D] . Lemmon, Andrew N. 2013

机译：关于由宽带隙功率半导体器件切换的电路的稳定性。
6. Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications [O] . Chao-Tsung Ma, Zhen-Huang Gu 2021

机译：用于中频到高功率应用的宽带隙半导体开关装置的驱动电路综述
7. Converter circuit design, semiconductor device selection and analysis of parasitics for micropower electrostatic generators [O] . Stark BH, Mitcheson PD, Miao P, 2006

机译：微功率静电发生器的转换器电路设计，半导体器件选择和寄生效应分析
8. Development of High-Temperature, High-Power, High-Efficiency, High- Voltage Converters Using Silicon Carbide (SiC) Delivery Order 0003: SiC High Voltage Converters, N-Type Ohmic Contract Development for SiC Power Devices [R] . Cheng, L. , Mazzola, M. S. 2006

机译：使用碳化硅（siC）交付订单开发高温，高功率，高效率，高压转换器订单0003：siC高压转换器，用于siC功率器件的N型欧姆合同开发

Selection method of power semiconductor devices for serial group circuits of power converters

摘要

著录项

相似文献

相关主题

期刊订阅