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From statistical model checking to statistical model inference: Characterizing the effect of process variations in analog circuits

机译:从统计模型检查到统计模型推断:表征模拟电路中工艺变化的影响

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This paper studies the effect of parameter variation on the behavior of analog circuits at the transistor (netlist) level. It is well known that variation in key circuit parameters can often adversely impact the correctness and performance of analog circuits during fabrication. An important problem lies in characterizing a safe subset of the parameter space for which the circuit can be guaranteed to satisfy the design specification. Due to the sheer size and complexity of analog circuits, a formal approach to the problem remains out of reach, especially at the transistor level. Therefore, we present a statistical model inference approach that exploits recent advances in statistical verification techniques. Our approach uses extensive circuit simulations to infer polynomials that approximate the behavior of a circuit. A procedure inspired by statistical model checking is then introduced to produce “statistically sound” models that extend the polynomial approximation. The resulting model can be viewed as a statistically guaranteed over-approximation of the circuit behavior. The proposed technique is demonstrated with two case studies in which it identifies subsets of parameters that satisfy the design specifications.
机译:本文研究了参数变化对晶体管(网表)级别的模拟电路行为的影响。众所周知,关键电路参数的变化通常会在制造过程中对模拟电路的正确性和性能产生不利影响。一个重要的问题在于表征参数空间的安全子集,可以保证电路满足设计规范。由于模拟电路的巨大规模和复杂性,解决该问题的正式方法仍然遥不可及,尤其是在晶体管级别。因此,我们提出了一种统计模型推断方法,该方法利用了统计验证技术的最新进展。我们的方法使用了广泛的电路仿真来推导近似电路性能的多项式。然后引入受统计模型检查启发的过程,以产生“统计上合理的”模型,该模型扩展了多项式近似。可以将所得模型视为电路行为的统计上保证的过度逼近。通过两个案例研究证明了所提出的技术,在该案例中,它确定了满足设计规范的参数子集。

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