Self-aligned microbonding technique for making butt-coupled germanium metal-semiconductor-metal waveguide photodetectors

摘要

A novel process using self-aligned microbonding technique for Ge butt-coupled to silicon waveguides is presented. The photodetector features a low dark current of 0.29 µA and a high responsivity of 1.01 A/W at 1310 nm at −1 V bias.