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Broadband transimpedance amplifier in 0.35-#x03BC;m SiGe BiCMOS technology for 10-Gb/s optical receiver analog front-end application

机译:0.35微米SiGe BICMOS技术的宽带跨阻抗放大器用于10 GB / S光学接收器模拟前端应用

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A 10-Gb/s fully integrated optical receiver analog frontend was realized in a commercial 0.35-μm 50-GHz fT SiGe BiCMOS technology. An input capacitance immunization technique was used to diminish the large input parasitic capacitance of the transimpedance amplifier to achieve a high-gain, wide-bandwidth, low-noise performance. The overall transimpedance gain is 107.3-dBΩ, and the −3 dB bandwidth is 8.85-GHz with 1.1 pF input parasitic capacitances. The measured results demonstrate a differential output swing of 842 mVp-p with 50-Ω output load, a peak-to-peak jitter (jitterp-p) of 13.22 ps, and a sensitivity of −16.4 dBm at a bit error ratio (BER) of 10−12 with a 231−1 PRBS test pattern. The total circuit, including output buffer, dissipates 195 mW under 3-V supply and occupies 0.7 x 0.7 mm2 chip area.
机译:在商业0.35μm50-GHz F T SIGE BICMOS技术中实现了10 GB / s的全集成光接收器模拟前端。输入电容免疫技术用于减小跨阻抗放大器的大输入寄生电容,以实现高增益,宽带宽,低噪声性能。整体跨阻抗增益为107.3-dbΩ,-3 dB带宽为8.85-ghz,具有1.1 pf输入寄生电容。测量结果证明了842 MV PP 的差分输出摆动,具有50Ω输出负载,峰值达峰值抖动(抖动 PP ),为13.22 ps,a误码比(BER)为10 -12 的误差比(BER)的灵敏度,具有2 31 -1 prbs测试图案。总电路(包括输出缓冲器),在3V电源下耗散195兆瓦,占用0.7×0.7mm 2 芯片区域。

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