The availability of vastly unutilized spectra in millimeter-wave (MMW) frequency range together with huge interest in high data rate wireless communications and radar sensors has led to research efforts in designing millimeter-wave integrated circuits (MMW-ICs). On the other hand, the aggressive scaling of silicon technologies has created the possibility of developing MMW-ICs using these technologies. Designing ICs at such high frequencies close to unity-gain frequency of the transistor, however, face new challenges from device characterization and circuit design to measurement complexity.
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