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A HKMG 28nm 1GHz fully-pipelined tile-able 1MB embedded SRAM IP with 1.39mm2 per MB

机译:HKMG 28nm 1GHz全流水线可铺砖的1MB嵌入式SRAM IP,每MB 1.39mm 2

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A fully-pipelined tile-able 1MB SRAM IP with a 0.127um2 cell in a HKMG 28nm bulk technology has an area of 1.39mm2/MB with 79.2% array efficiency. It operates with 2-cycle latency up to 1GHz. The no-repair hardware has a circuit limited yield of 99.92 and 53% at 100 and 850MHz, respectively with 0.75V VDD. A Data Retention Voltage of 0.42V has been measured.
机译:HKMG 28nm批量技术中具有0.127um 2 单元的全流水线可贴砖1MB SRAM IP面积为1.39mm 2 / MB,阵列效率为79.2% 。它以高达1GHz的2周期延迟运行。在0.75V VDD的情况下,在100和850MHz频率下,无维修硬件的电路受限良率分别为99.92和53%。测量的数据保持电压为0.42V。

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