HKMG FLASH MEMORY EMBEDDED WITH HKMG TECHNOLOGY

摘要

integrated circuit structure includes a flash memory cell and MOS logic devices. Flash memory cells are floating gate dielectric, a floating gate, a control gate, a floating gate and an erase gate on the second side of the control a first word line, and a floating gate and a control gate on the side of the gate above the floating gate above the floating gate dielectric It included. The MOS logic device is a high dielectric constant (high-k) gate dielectric, and a high dielectric constant (high-k) gate dielectric, a gate electrode of the above. A gate electrode, a control gate, the word line, and the erase gate is formed of the same metal-containing material, which has a top surface with each other on the same plane.