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A New Placement Algorithm for Reduction of Soft Errors in Macrocell Based Design of Nanometer Circuits

机译:一种新的放置算法,用于减少基于纳米电路的宏小区设计软误差

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The rates of transient faults such as soft errors have been significantly impacted due to the aggressive scaling trends in the nanometer regime. In the past, several circuit optimization techniques have been proposed for preventing soft errors in logic circuits. These approaches include, inclusion of concurrent error detection circuits on selective nodes, selective gate sizing, dual-VDD assignment and selective node hardening at the transistor level. However, we show in this paper that larger wirelengths for nets can act as larger RC ladders and can effectively filter out the transient glitches due to radiation strikes. Based on this, we propose a simulated annealing based placement algorithm that significantly reduces the SER of logic circuits. We accurately capture the soft error masking effects by using a new metric called the logical observability. The cost function for simulated annealing is modeled as the summation of the logical observability weighted with the netlength for each net, while simultaneously constraining the total area and the total wirelength. The algorithm tries to assign higher wirelengths for nets with low masking probability for higher glitch reduction, while maintaining low delay and area penalty for the overall circuit. Each placement configuration is represented as a sequence pair and the moves in the space of sequence pairs are probabilistically accepted depending upon the cost gradient and the iteration count. Higher cost moves have a higher probability of acceptance at initial iterations for better state space exploration, while at later iterations the algorithm greedily tries to minimize the cost. To the best of our knowledge, this is the first time that soft error rate reduction is attempted during the placement stage. The proposed algorithm has been implemented and validated on the ISCAS85 benchmarks. We have experimented using the FreePDK 45nm Process Design Kit and the OSU cell library which indicate that our radiation immune placement algorithm can significantly reduce the SER in logic circuits with very low overheads in delay and area.
机译:由于纳米制度的积极缩放趋势,瞬态断层率(如软误差)的速率受到显着影响。过去,已经提出了用于防止逻辑电路中的软错误的几种电路优化技术。这些方法包括在晶体管电平的选择节点,选择性栅极大小,双VDD分配和选择性节点硬化上包含并发错误检测电路。然而,我们在本文中展示了较大的网的WireLength可以充当较大的RC梯子,并且可以有效地滤除由于辐射撞击而导致的瞬态毛刺。基于此,我们提出了一种基于模拟的退火的放置算法,可显着减少逻辑电路的SER。我们通过使用称为逻辑可操作性的新度量准确地捕获软错误屏蔽效果。模拟退火的成本函数被建模为对每个网络的NetLength的逻辑观测性的求和,同时约束总面积和总电线。该算法试图为具有低屏蔽概率的网络分配更高的WIRELENGS,以便更高的毛刺减少,同时保持整个电路的低延迟和区域损失。每个放置配置表示为序列对,并且序列对空间中的移动是概率地接受的,这取决于成本梯度和迭代计数。更高的成本移动对更好的状态空间探索的初始迭代具有更高的接受概率,而稍后迭代算法贪婪地尝试最小化成本。据我们所知,这是在放置阶段期间首次尝试软错误率减少。在ISCAS85基准上已经实现和验证了所提出的算法。我们使用FreePDK 45nm Process Design套件和OSU单元库进行了实验,表明我们的辐射免疫放置算法可以显着减少延迟和区域的极低开销中的逻辑电路中的SER。

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