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Design of a two stage Ku band low noise amplifier for satellite applications

机译:用于卫星应用的两个阶段Ku带低噪声放大器的设计

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This paper presents the design of a cascaded two stage low noise amplifier (LNA) for Ku band applications. Hetero Junction Field Effect Transistor (HJFET) is used as an active device to realize low noise figure. Multi stage amplifiers have been designed to obtain increased gain than a single stage amplifier. In this work, two perfectly matched circuits have been cascaded to make the design simpler and provide easy troubleshooting. The designed LNA has a gain of 25.81 dB and a NF of 0.40 dB at 12 GHz. The designed high gain LNA can be used for satellite applications.
机译:本文介绍了用于KU频段应用的级联两级低噪声放大器(LNA)的设计。异质结场效应晶体管(HJFET)用作实现低噪声系数的有源器件。设计了多级放大器,以获得比单级放大器增加的增益。在这项工作中,两个完美匹配的电路已经级联,以使设计更简单并提供简单的故障排除。设计的LNA的增益为25.81dB,NF为0.40 dB,12GHz。设计的高增益LNA可用于卫星应用。

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