首页> 美国政府科技报告 >Ontwerp en Realisatie van een Twee Traps C-Band Lage-Ruis Versterker (Design and Realisation of a Two-Stage C-Band Low Noise Amplifier).
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Ontwerp en Realisatie van een Twee Traps C-Band Lage-Ruis Versterker (Design and Realisation of a Two-Stage C-Band Low Noise Amplifier).

机译:Ontwerp en Realisatie van een Twee Traps C-Band Lage-Ruis Versterker(两级C波段低噪声放大器的设计和实现)。

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摘要

A description is given for the design and measuring results of a two stage low noise amplifier designed for the frequency band of 5.0 - 5.6 GHz. The amplification over this frequency band amounts at least 19 dB with a noise figure lower than 1.4 dB. The circuit of the amplifier consists of microstrip elements etched on 0.787 mm. thick 5870 DUROID. This is a polytetrafluorethylene substrate with a relative dielectric constant of 2.33. The dimensions of the amplifier are 40x50mm. Keywords: Low noise microwave amplifiers; C band; Netherlands; Dutch language. (edc)

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