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High-gain wide-bandwidth capacitor-less low-dropout regulator with zero insertion utilizing frequency response of inner loops

机译:利用内部环路的频率响应实现零插入的高增益宽带无电容低压差稳压器

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Introducing a new zero insertion technique, a proposed capacitor-less LDO has a wide bandwidth of 3.0MHz at 150mA with bias current of 40µA and the best line and load regulations of 0.0024%/V and 0.0000417%/mA, respectively, compared with previously reported LDOs. This chip has 100mV dropout voltage when using the main PMOS of a 76,800um/0.5um I/O transistor. The measured PSRR was 57.75dB at 10 kHz and 29pF of total capacitance was used with the IC size of 0.28mm2.
机译:通过引入一种新的零插入技术,拟议的无电容器LDO在150mA时的带宽为3.0MHz,偏置电流为40µA,最佳线路和负载调整率分别为0.0024%/ V和0.0000417%/ mA。报告的LDO。当使用76,800um / 0.5um I / O晶体管的主PMOS时,该芯片具有100mV的压降电压。在10 kHz时测得的PSRR为57.75dB,使用的总电容为29pF,IC尺寸为0.28mm 2

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