Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1#x00D7;10#x2212;9 #x2126;-cm2 using ultrathin TiO2#x2212;x interlayer between metal and silicon

摘要

Metal-insulator-Si (MIS) tunnel contact is studied using ultrathin, non-stoichiometric TiO2−x interlayer on n- and n+ Si. Systematic analysis indicates a record low Schottky barrier height (SBH) of 0.15eV for Ti metal using 10A thick TiO2−x interlayer (TIns). Ti/TiO2−x+ Si contact achieves a record low specific contact resistivity (ρc) of 9.1×10−9Ω-cm2.The modeling of ρc suggests tunneling mass, m*Tunnel, of 0.7m0 for TiO2−x compared to stoichiometric TiO2 indicating transition from an insulator to a wide gap semiconductor.