Enhancing SRAM performance by advanced FinFET device and circuit technology collaboration for 14nm node and beyond

摘要

This paper presents a high performance and highly reliable SRAM realized by collaboration between advanced FinFET device and circuit technology. As for the device technology, the amorphous metal gate FinFET with the record smallest AVt value (=1.34 mVµm) are demonstrated. As for the circuit technology, it is demonstrated that both reliability and performance of SRAM are dramatically enhanced by introducing the independent-double-gate (IDG) FinFET.