Dual-gate junction-less FET-detection for in-plane nano-electro-mechanical resonators

摘要

This paper presents the high frequency characterization of a fabricated in-plane nano-electro-mechanical resonator in which the doubly clamped nano-wire acts as a suspended channel for a dual gate junction-less field-effect-transistor that is used for the resonance frequency detection. The applied DC biases to gates of the transistor were optimized to amplify the detected output signal of the resonator. The effects of changes in the applied DC biases and radio-frequency power on the resonance frequency and quality factor of the resonator have been investigated. Reduction of thermoelestic quality factor, QThermoelastic, is discussed in terms of elevated temperature in the thermally oxidized nano-wires with an increase in the applied radio-frequency power.