A compact model of hafnium-oxide-based resistive random access memory

摘要

In this paper, a compact model of hafnium-oxide-based resistive random access memory (RRAM) cell is developed. The proposed model includes the effect of the temperature and cycle-to-cycle stochastic variations affecting the device operations. Simple I–V measurements are used to extract the model parameters. The model accurately reproduces the I–V curves of the switching cycles in different operating conditions.