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An Area-Efficient Word-line Pitch-aligned 8T SRAM Compatible Digital-to-Analog Converter

机译:一个区域高效的字体距离对齐的8T SRAM兼容数模转换器

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Area and energy-efficient data converters are an integral part of In-Memory Compute (IMC) engines. The conventional Digital to Analog Converters (DACs) uses binary-weighted pull-up current sources with scan-flops feeding in the digital input. These bulky pull-up devices and scan-flops make it hard to integrate along-side a memory array in an area-efficient manner. Further, it is prone to error due to local variations owing to limited digital control. In this paper, we propose an area-efficient, Word-Line (WL) pitch-aligned, layout friendly In-Memory compatible DAC (IM-DAC), whose layout resembles the 8T SRAM array very closely, thus achieving memory array-like density. Simulation results show that the worst-case INL and DNL is 2.42 LSB and -0.32 LSB, respectively. We obtained a 3.4X area advantage in comparison with the conventional DAC. The high-density layout allows for additional calibration pull-up stacks, with minimal area penalty, that reduces the standard deviation of the linearized-current to 48.76% of the corresponding value before calibration.
机译:区域和节能数据转换器是内存计算(IMC)引擎的组成部分。传统的数字到模拟转换器(DACS)使用二进制加权上拉电流源,其中扫描闪络馈送在数字输入中。这些庞大的上拉装置和扫描拖鞋使其难以以区域有效的方式沿着侧面存储阵列集成。此外,由于数字控制有限,因此由于局部变化而易于错误。在本文中,我们提出了一个区域效率,单词线(WL)音调对齐,布局友好的内存兼容DAC(IM-DAC),其布局非常紧密地类似于8T SRAM阵列,从而实现存储器阵列类似的密度。仿真结果表明,最坏情况INL和DNL分别为2.42 LSB和-0.32 LSB。与传统DAC相比,我们获得了3.4倍的区域优势。高密度布局允许额外的校准上拉堆叠,具有最小的区域损失,这将线性化电流的标准偏差降低到校准前相应值的48.76%。

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